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1 CMPA0060025F 25 w, 20 mhz-6000 mhz, gan mmic power amplifer crees CMPA0060025F is a gallium nitride (gan) high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths compared to si and gaas transistors. this mmic enables extremely wide bandwidths to be achieved in a small footprint screw-down package. features ? 17 db small signal gain ? 25 w typical p sat ? operation up to 50 v ? high breakdown voltage ? high temperature operation ? 0.5 x 0.5 total product size applications ? ultra broadband amplifers ? test instrumentation ? emc amplifer drivers re v 4.0 C ma y 2015 pn: CMPA0060025F package type: 780019 typical performance over 20 mhz - 6.0 ghz (t c = 25?c) parameter 20 mhz 0.5 ghz 1.0 ghz 2.0 ghz 3.0 ghz 4.0 ghz 5.0 ghz 6.0 ghz units gain 21.4 20.1 19.3 16.7 16.6 16.8 15.7 15.5 db output power @ p in = 32 dbm 26.9 30.2 26.3 23.4 24.5 24.0 20.9 18.6 w power gain @ p in = 32 dbm 12.3 12.8 12.2 11.7 11.9 11.8 11.3 10.7 db effciency @ p in = 32 dbm 63 55 40 31 33 31 28 26 % note 1 : v dd = 50 v, i dq = 500 ma figure 1. subject to change without notice. www.cree.com/wireless
2 absolute maximum ratings (not simultaneous) at 25?c parameter symbol rating units drain-source voltage v dss 84 vdc gate-source voltage v gs -10, +2 vdc storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 4 ma soldering temperature 1 t s 245 ?c screw torque 40 in-oz thermal resistance, junction to case r jc 3.3 ?c/w case operating temperature 2,3 t c -40, +150 ?c note: 1 refer to the application note on soldering at www.cree.com/rf/document-library 2 measured for the CMPA0060025F at p in = 32 dbm. electrical characteristics (frequency = 20 mhz to 6.0 ghz unless otherwise stated; t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics gate threshold voltage 2 v (gs)th -3.8 -3.0 -2.3 v v ds = 20 v, ?i d = 20 ma gate quiescent voltage v (gs)q C -2.7 C vdc v dd = 50 v, i dq = 500 ma, p in = 32 dbm saturated drain current i dc C 12 C a v ds = 12 v, v gs = 2.0 v rf characteristics 1 power output at p out @ 4.5 ghz p out1 41.0 42.8 C dbm v dd = 50 v, i dq = 500 ma, p in = 32 dbm power output at p out @ 5.0 ghz p out2 41.0 43.3 C dbm v dd = 50 v, i dq = 500 ma, p in = 32 dbm power output at p out @ 6.0 ghz p out3 41.0 42.9 C dbm v dd = 50 v, i dq = 500 ma, p in = 32 dbm drain effciency at p out @ 4.5 ghz 1 18.0 24.1 C % v dd = 50 v, i dq = 500 ma, p in = 32 dbm drain effciency at p out @ 5.0 ghz 2 18.0 28.0 C % v dd = 50 v, i dq = 500 ma, p in = 32 dbm drain effciency at p out @ 6.0 ghz 3 18.0 27.2 C % v dd = 50 v, i dq = 500 ma, p in = 32 dbm output mismatch stress vswr C C 5 : 1 y no damage at all phase angles, v dd = 50 v, i dq = 500 ma, p in = 32 dbm small signal rf characteristics s21 s11 s22 frequency min. typ. max. min. typ. max. min. typ. max. conditions 0.02 ghz - 0.25 ghz 18.0 19.3 23.7 C -4.1 -2.5 C -8.5 -4.5 v dd = 50 v, i dq = 500 ma 0.25 ghz - 0.5 ghz 18.0 19.8 22.0 C -6.8 -3.5 C -8.9 -4.5 v dd = 50 v, i dq = 500 ma 0.5 ghz - 1.0 ghz 15.5 18.6 22.0 C -15.3 -6.5 C -6.7 -4.5 v dd = 50 v, i dq = 500 ma 1.0 ghz - 2.0 ghz 15.5 18.6 22.0 C -15.3 -12.5 C -6.7 -4.5 v dd = 50 v, i dq = 500 ma 2.0 ghz - 3.0 ghz 13.0 18.6 20.0 C -15.3 -12.5 C -6.0 -2.5 v dd = 50 v, i dq = 500 ma 3.0 ghz - 6.0 ghz 13.0 16.3 20.0 C -14.2 -6.5 C -5.3 -2.5 v dd = 50 v, i dq = 500 ma notes: 1 p out is defned as p in = 32 dbm. 2 the device will draw approximately 55-70 ma at pinch off due to the internal circuit structure. CMPA0060025F rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
3 typical performance small signal gain input & output return losses vs frequency at 50 v vs frequency at 50 v small signal gain input & output return losses vs frequency at 40 v vs frequency at 40 v 15 20 25 gai n ( d b ) small signal gain 50v 0 5 10 0.0 1.0 2.0 3.0 4.0 5.0 6.0 gai n ( d b ) frequency (ghz) 15 20 25 gai n ( d b ) small signal gain 40v 0 5 10 0.0 1.0 2.0 3.0 4.0 5.0 6.0 gai n ( d b ) frequency (ghz) -10 -5 0 r etu r n l o ss ( d b ) input & output return losses 50v -30 -25 -20 -15 0.0 1.0 2.0 3.0 4.0 5.0 6.0 r etu r n l o ss ( d b ) frequency (ghz) s22 s11 -10 -5 0 r etu r n l o ss ( d b ) input & output return losses 40v -30 -25 -20 -15 0.0 1.0 2.0 3.0 4.0 5.0 6.0 r etu r n l o ss ( d b ) frequency (ghz) s22 s11 CMPA0060025F rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
4 typical performance output power at p in = 32 dbm vs frequency power gain at p in = 32 dbm vs frequency as a function of drain voltage as a function of drain voltage drain effciency at p in = 32 dbm vs frequency as a function of drain voltage 46 47 48 49 50 ou t p u t po w er ( d b m) power at pin 32 dbm 50v 40v 40 41 42 43 44 45 0.0 1.0 2.0 3.0 4.0 5.0 6.0 ou t p u t po w er ( d b m) frequency (ghz) 12 14 16 18 20 gai n ( d b ) power gain @ pin 32 dbm 50v 40v 0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0 5.0 6.0 gai n ( d b ) frequency (ghz) 40% 50% 60% 70% d r ai n ef f i ci en cy ( % ) drain efficiency vs. freqeuncy @ pin 32 dbm 50v 40v 0% 10% 20% 30% 0.0 1.0 2.0 3.0 4.0 5.0 6.0 d r ai n ef f i ci en cy ( % ) frequency (ghz) CMPA0060025F rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
5 typical performance gain vs input power at 50v effciency vs input power at 50 v as a function of frequency as a function of frequency gain vs input power at 40v effciency vs input power at 40 v as a function of frequency as a function of frequency 15 20 25 gai n ( d b ) gain vs. input power 50 v 0 5 10 10 15 20 25 30 35 gai n ( d b ) input power (dbm) 20 mhz 1.0 ghz 2.0 ghz 4.0 ghz 6.0 ghz 15 20 25 gai n ( d b ) gain vs input power 0 5 10 10 15 20 25 30 35 gai n ( d b ) input power (dbm) 20 mhz 1.0 ghz 2.0 ghz 4.0 ghz 6.0 ghz 40% 50% 60% 70% ef f i ci en cy ( % ) eff vs. input power 50 v 20 mhz 1.0 ghz 2.0 ghz 4.0 ghz 6.0 ghz 0% 10% 20% 30% 10 15 20 25 30 35 ef f i ci en cy ( % ) input power (dbm) 40% 50% 60% 70% ef f i ci en cy ( % ) eff vs. input power 40 v 20 mhz 1.0 ghz 2.0 ghz 4.0 ghz 6.0 ghz 0% 10% 20% 30% 10 15 20 25 30 35 ef f i ci en cy ( % ) input power (dbm) CMPA0060025F rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
6 general device information the CMPA0060025F is a gan hemt mmic power amplifer, which operates between 20 mhz - 6.0 ghz. the amplifer typi - cally provides 17 db of small signal gain and 25 w saturated output power with an associated power added effciency of better than 20 %. the wideband amplifers input and output are internally matched to 50 ohm. the amplifer requires bias from appropriate bias-ts, through the rf input and output ports. the CMPA0060025F is provided in a fange package format. the input and output connections are gold plated to enable gold bond wire attach at the next level assembly. the measurements in this data sheet were taken on devices wire-bonded to the test fxture with 2 mil gold bond wires. the CMPA0060025F-amp1 and the device were then measured using external bias-ts, (tecdia: amp1t-h06m20 or similar), as shown in figure 2. the bias-ts were included in the calibration of the test system. all other losses associated with the test fxture are included in the measurements. figure 2. typical test system setup required for measuring CMPA0060025F-amp1 cmpa2560002f mounted in the test fixture input bias t output bias t v g g rf in rf out v dd CMPA0060025F CMPA0060025F rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
7 CMPA0060025F power dissipation de-rating curve note 1. area exceeds maximum case operating temperature (see page 2). electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm ii (200 < 500 v) jedec jesd22 c101-c 40 50 60 po w er d i ssi p ati o n ( w ) power dissipation derating curve vs max tcase 0 10 20 30 0 50 100 150 200 250 po w er d i ssi p ati o n ( w ) maximum case temperature ( c) note 1 CMPA0060025F rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
8 CMPA0060025F-amp demonstration amplifer circuit CMPA0060025F -amp demonstration amplifer circuit outline CMPA0060025F rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
9 CMPA0060025F -amp demonstration amplifer circuit bill of materials designator description qty j1,j2 connector, sma, amp11052901-1 2 - pcb, taconic, rf-35-0100-ch/ch 1 q1 CMPA0060025F 1 notes 1 the CMPA0060025F is connected to the pcb with 2.0 mil au bond wires. 2 an external bias t is required. product dimensions CMPA0060025F (package type 780019) CMPA0060025F rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
10 product ordering information order number description unit of measure image CMPA0060025F gan mmic each CMPA0060025F-tb test board without gan mmic each CMPA0060025F-amp test board with gan mmic installed each CMPA0060025F rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
11 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for its use or for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications, and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. cree and the cree logo are registered trademarks of cree, inc. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing & sales cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 CMPA0060025F rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.

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